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FQB4N80TM
FQB4N80TM
MOSFETs FQB4N80TM
onsemi
FQB4N80TM
--
Diodes, Transistors and Thyristors
MOSFETs
FQB4N80TM.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)35
Typical Rise Time (ns)45
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)19
Typical Gate Charge @ Vgs (nC)19@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)75
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)800
Typical Gate Plateau Voltage (V)6.2
Typical Turn-Off Delay Time (ns)35
Maximum Diode Forward Voltage (V)1.4
Typical Gate to Drain Charge (nC)9.1
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)4.2
Typical Reverse Recovery Time (ns)575
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)680@25V
Typical Reverse Recovery Charge (nC)3650
Maximum Drain Source Resistance (mOhm)3600@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)15.6
Typical Reverse Transfer Capacitance @ Vds (pF)8.6@25V
Description
Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R
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