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FQB50N06LTM
FQB50N06LTM
MOSFETs FQB50N06LTM
onsemi
FQB50N06LTM
--
Diodes, Transistors and Thyristors
MOSFETs
FQB50N06LTM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)145
Typical Rise Time (ns)380
Number of Elements per Chip1
Maximum Power Dissipation (mW)3750
Typical Gate Charge @ Vgs (nC)24.5@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)445
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4.1
Typical Turn-Off Delay Time (ns)80
Maximum Diode Forward Voltage (V)1.5
Typical Gate to Drain Charge (nC)14.5
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)6
Typical Reverse Recovery Time (ns)65
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)52.4
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1250@25V
Typical Reverse Recovery Charge (nC)125
Maximum Drain Source Resistance (mOhm)21@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)210
Typical Reverse Transfer Capacitance @ Vds (pF)90@25V
Description
Trans MOSFET N-CH 60V 52.4A 3-Pin(2+Tab) D2PAK T/R
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