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FQB8N90CTM
FQB8N90CTM
MOSFETs FQB8N90CTM
onsemi
FQB8N90CTM
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Diodes, Transistors and Thyristors
MOSFETs
FQB8N90CTM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)70
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)171000
Typical Gate Charge @ 10V (nC)35
Typical Gate Charge @ Vgs (nC)35@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)40
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)70
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.3
Typical Input Capacitance @ Vds (pF)1600@25V
Maximum Drain Source Resistance (mOhm)1900@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 900V 6.3A 3-Pin(2+Tab) D2PAK T/R
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