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FQB8P10TM
FQB8P10TM
MOSFETs FQB8P10TM
onsemi
FQB8P10TM
--
Diodes, Transistors and Thyristors
MOSFETs
FQB8P10TM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)35
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)3750
Typical Gate Charge @ 10V (nC)12
Typical Gate Charge @ Vgs (nC)12@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)20
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)360@25V
Maximum Drain Source Resistance (mOhm)530@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 100V 8A 3-Pin(2+Tab) D2PAK T/R
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