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FQD10N20LTM
FQD10N20LTM
MOSFETs FQD10N20LTM
onsemi
FQD10N20LTM
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Diodes, Transistors and Thyristors
MOSFETs
FQD10N20LTM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)95
Typical Rise Time (ns)150
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)13@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)50
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.6
Typical Input Capacitance @ Vds (pF)640@25V
Maximum Drain Source Resistance (mOhm)360@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R
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