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FQD12N20LTF
FQD12N20LTF
MOSFETs FQD12N20LTF
onsemi
FQD12N20LTF
--
Diodes, Transistors and Thyristors
MOSFETs
FQD12N20LTF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-252
Typical Fall Time (ns)120
Typical Rise Time (ns)190
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)16@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)60
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)830@25V
Maximum Drain Source Resistance (MOhm)280@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R
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