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FQD12N20LTM
FQD12N20LTM
MOSFETs FQD12N20LTM
onsemi
FQD12N20LTM
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Diodes, Transistors and Thyristors
MOSFETs
FQD12N20LTM.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)120
Typical Rise Time (ns)190
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)16@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)60
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)830@25V
Maximum Drain Source Resistance (mOhm)280@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R
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