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FQD17N08LTM
FQD17N08LTM
MOSFETs FQD17N08LTM
onsemi
FQD17N08LTM
--
Diodes, Transistors and Thyristors
MOSFETs
FQD17N08LTM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyDMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)75
Typical Rise Time (ns)290
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)8.8@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12.9
Typical Input Capacitance @ Vds (pF)400@25V
Maximum Drain Source Resistance (mOhm)100@10V
Description
Trans MOSFET N-CH 80V 12.9A 3-Pin(2+Tab) DPAK T/R
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