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FQD17P06TF
FQD17P06TF
MOSFETs FQD17P06TF
onsemi
FQD17P06TF
--
Diodes, Transistors and Thyristors
MOSFETs
FQD17P06TF.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
TabTab
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-252
Typical Fall Time (ns)60
Typical Rise Time (ns)100
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)21
Typical Gate Charge @ Vgs (nC)21@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)690@25V
Maximum Drain Source Resistance (mOhm)135@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
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