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FQD19N10LTF
FQD19N10LTF
MOSFETs FQD19N10LTF
onsemi
FQD19N10LTF
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Diodes, Transistors and Thyristors
MOSFETs
FQD19N10LTF.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Standard Package NameTO-252
Typical Fall Time (ns)140
Typical Rise Time (ns)410
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)14@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15.6
Typical Input Capacitance @ Vds (pF)670@25V
Maximum Drain Source Resistance (mOhm)100@10V
Description
Trans MOSFET N-CH 100V 15.6A 3-Pin(2+Tab) DPAK T/R
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