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FQD4N20LTM
FQD4N20LTM
MOSFETs FQD4N20LTM
onsemi
FQD4N20LTM
--
Diodes, Transistors and Thyristors
MOSFETs
FQD4N20LTM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Standard Package NameTO-252
Typical Fall Time (ns)40
Typical Rise Time (ns)70
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)4@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)15
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.2
Typical Input Capacitance @ Vds (pF)240@25V
Maximum Drain Source Resistance (mOhm)1350@10V
Description
Trans MOSFET N-CH 200V 3.2A 3-Pin(2+Tab) DPAK T/R
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