Product Attribute | Attribute Value |
PPAP | No |
ECCN (US) | EAR99 |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | DMOS |
Typical Fall Time (ns) | 30 |
Typical Rise Time (ns) | 70 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ 10V (nC) | 6.3 |
Typical Gate Charge @ Vgs (nC) | 6.3@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 12 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3.6 |
Typical Input Capacitance @ Vds (pF) | 190@25V |
Maximum Drain Source Resistance (mOhm) | 1050@10V |
Description |