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FQI4N90TU
FQI4N90TU
MOSFETs FQI4N90TU
onsemi
FQI4N90TU
--
Diodes, Transistors and Thyristors
MOSFETs
FQI4N90TU.pdf
Specification
Product AttributeAttribute Value
HTS8541290095
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height9.2
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageI2PAK
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-262
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)40
Typical Rise Time (ns)70
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)24
Typical Gate Charge @ Vgs (nC)24@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)45
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.2
Typical Input Capacitance @ Vds (pF)860@25V
Maximum Drain Source Resistance (MOhm)3300@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Tube
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