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FQI8N60CTU
FQI8N60CTU
MOSFETs FQI8N60CTU
onsemi
FQI8N60CTU
--
Diodes, Transistors and Thyristors
MOSFETs
FQI8N60CTU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height9.2
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageI2PAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-262
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)64.5
Typical Rise Time (ns)60.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)28
Typical Gate Charge @ Vgs (nC)28@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)105
Typical Turn-On Delay Time (ns)16.5
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)5
Typical Turn-Off Delay Time (ns)81
Maximum Diode Forward Voltage (V)1.4
Typical Gate to Drain Charge (nC)12
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)4.5
Typical Reverse Recovery Time (ns)365
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)965@25V
Typical Reverse Recovery Charge (nC)3400
Maximum Drain Source Resistance (mOhm)1200@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)30
Typical Reverse Transfer Capacitance @ Vds (pF)12@25V
Description
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Tube
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