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MOSFETs FQI9N30TU
onsemi
FQI9N30TU
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Diodes, Transistors and Thyristors
MOSFETs
FQI9N30TU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height9.2
Package Length10
Product CategoryPower MOSFET
Supplier PackageI2PAK
Standard Package NameTO-262
Typical Fall Time (ns)48
Typical Rise Time (ns)120
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)300
Typical Turn-Off Delay Time (ns)27
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)570@25V
Maximum Drain Source Resistance (mOhm)450@10V
Description
Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) I2PAK Rail
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