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FQN1N60CTA-G
FQN1N60CTA-G
MOSFETs FQN1N60CTA-G
onsemi
FQN1N60CTA-G
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Diodes, Transistors and Thyristors
MOSFETs
FQN1N60CTA-G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingThrough Hole
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-92
Process TechnologyDMOS
Typical Fall Time (ns)27
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ 10V (nC)4.8
Typical Gate Charge @ Vgs (nC)4.8@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)13
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.3
Typical Input Capacitance @ Vds (pF)130@25V
Maximum Drain Source Resistance (mOhm)11500@10V
Description
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92
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