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FQP44N10
FQP44N10
MOSFETs FQP44N10
onsemi
FQP44N10
--
Diodes, Transistors and Thyristors
MOSFETs
FQP44N10.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-220
Typical Fall Time (ns)100
Typical Rise Time (ns)190
Number of Elements per Chip1
Maximum Power Dissipation (mW)146000
Typical Gate Charge @ 10V (nC)48
Typical Gate Charge @ Vgs (nC)48@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)90
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)43.5
Typical Input Capacitance @ Vds (pF)1400@25V
Maximum Drain Source Resistance (MOhm)39@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 43.5A 3-Pin(3+Tab) TO-220 Tube
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