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FQP5N80
FQP5N80
MOSFETs FQP5N80
onsemi
FQP5N80
--
Diodes, Transistors and Thyristors
MOSFETs
FQP5N80.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.1(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Process TechnologyDMOS
Standard Package NameTO-220
Typical Fall Time (ns)40
Typical Rise Time (ns)60
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)22
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)55
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.8
Typical Input Capacitance @ Vds (pF)950@25V
Maximum Drain Source Resistance (mOhm)2600@10V
Description
Trans MOSFET N-CH 800V 4.8A 3-Pin(3+Tab) TO-220 Rail
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