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FQP8P10
FQP8P10
MOSFETs FQP8P10
onsemi
FQP8P10
--
Diodes, Transistors and Thyristors
MOSFETs
FQP8P10.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-220
Typical Fall Time (ns)35
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)65000
Typical Gate Charge @ 10V (nC)12
Typical Gate Charge @ Vgs (nC)12@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)120
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)6.9
Typical Turn-Off Delay Time (ns)20
Maximum Diode Forward Voltage (V)4
Typical Gate to Drain Charge (nC)6.4
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)3
Typical Reverse Recovery Time (ns)98
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)360@25V
Typical Reverse Recovery Charge (nC)350
Maximum Drain Source Resistance (mOhm)530@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)32
Typical Reverse Transfer Capacitance @ Vds (pF)30@25V
Description
Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220 Tube
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