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FQPF6N80C
FQPF6N80C
MOSFETs FQPF6N80C
onsemi
FQPF6N80C
--
Diodes, Transistors and Thyristors
MOSFETs
FQPF6N80C.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7
Package Height15.87
Package Length10.16
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)44
Typical Rise Time (ns)65
Number of Elements per Chip1
Maximum Power Dissipation (mW)51000
Typical Gate Charge @ 10V (nC)21
Typical Gate Charge @ Vgs (nC)21@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)47
Maximum Diode Forward Voltage (V)1.4
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1010@25V
Maximum Drain Source Resistance (mOhm)2500@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Description
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
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