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FQU2N60CTU
FQU2N60CTU
MOSFETs FQU2N60CTU
onsemi
FQU2N60CTU
--
Diodes, Transistors and Thyristors
MOSFETs
FQU2N60CTU.pdf
Specification
Product AttributeAttribute Value
HTS8541290095
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.3
Package Height6.1
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)28
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)8.5
Typical Gate Charge @ Vgs (nC)8.5@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)4.9
Typical Turn-Off Delay Time (ns)24
Maximum Diode Forward Voltage (V)1.4
Typical Gate to Drain Charge (nC)4.1
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)1.3
Typical Reverse Recovery Time (ns)230
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)180@25V
Typical Reverse Recovery Charge (nC)1000
Maximum Drain Source Resistance (mOhm)4700@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)7.6
Typical Reverse Transfer Capacitance @ Vds (pF)4.3@25V
Description
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
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