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MOSFETs FW344A-TL-2WX
onsemi
FW344A-TL-2WX
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual Dual Drain |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 10@N Channel|24@P Channel |
| Typical Rise Time (ns) | 21@N Channel|34@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700 |
| Typical Gate Charge @ 10V (nC) | 5.6@N Channel|5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 5.6@10V@N Channel|5@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6@N Channel|5.4@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 20@N Channel|28@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.5@N Channel|3.5@P Channel |
| Typical Input Capacitance @ Vds (pF) | 280@10V@N Channel|250@10V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 64@10V@N Channel|102@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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