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MOSFETs GRP-DATA-IRHNS67264SCS
Infineon
GRP-DATA-IRHNS67264SCS
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Material | Si |
| ECCN (US) | EAR99 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 50(Max) |
| Typical Rise Time (ns) | 150(Max) |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 250000 |
| Typical Gate Charge @ Vgs (nC) | 220(Max)@12V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 50(Max) |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 100(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 6912@25V |
| Maximum Drain Source Resistance (mOhm) | 40@12V |
| Description |
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