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MOSFETs GRP-DATA-JANTXV2N6849
Infineon
GRP-DATA-JANTXV2N6849
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Not Compliant |
| Diameter | 9.22(Max) |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Height | 4.54(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-39 |
| Maximum IDSS (uA) | 25 |
| Process Technology | HEXFET |
| Standard Package Name | TO-205-AF |
| Typical Fall Time (ns) | 140(Max) |
| Typical Rise Time (ns) | 140(Max) |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 25000 |
| Typical Gate Charge @ 10V (nC) | 34.8(Max) |
| Typical Gate Charge @ Vgs (nC) | 34.8(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 350 |
| Typical Turn-On Delay Time (ns) | 60(Max) |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 140(Max) |
| Maximum Diode Forward Voltage (V) | 4.3 |
| Typical Gate to Drain Charge (nC) | 23.1(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 6.8(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 800@25V |
| Maximum Drain Source Resistance (mOhm) | 320@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 25 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 125@25V |
| Description |
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