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HUF75309T3ST
HUF75309T3ST
MOSFETs HUF75309T3ST
onsemi
HUF75309T3ST
--
Diodes, Transistors and Thyristors
MOSFETs
HUF75309T3ST.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Standard Package NameSOT
Typical Fall Time (ns)28
Typical Rise Time (ns)20
Number of Elements per Chip1
Maximum Power Dissipation (mW)1100
Typical Gate Charge @ Vgs (nC)19@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)12
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)352@25V
Maximum Drain Source Resistance (mOhm)70@10V
Description
Trans MOSFET N-CH Si 55V 3A 4-Pin(3+Tab) SOT-223 T/R
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