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HUF75329D3
HUF75329D3
MOSFETs HUF75329D3
onsemi
HUF75329D3
--
Diodes, Transistors and Thyristors
MOSFETs
HUF75329D3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.5(Max)
Package Height6.3(Max)
Package Length6.8(Max)
Product CategoryPower MOSFET
Supplier PackageTO-251
Standard Package NameTO-251
Typical Fall Time (ns)33
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)128000
Typical Gate Charge @ Vgs (nC)50@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)10
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)1060@25V
Maximum Drain Source Resistance (MOhm)26@10V
Description
Trans MOSFET N-CH Si 55V 20A 3-Pin(3+Tab) TO-251 Rail
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