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HUF75329D3S
HUF75329D3S
MOSFETs HUF75329D3S
onsemi
HUF75329D3S
--
Diodes, Transistors and Thyristors
MOSFETs
HUF75329D3S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingRail
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)33
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)128000
Typical Gate Charge @ Vgs (nC)50@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)10
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)1060@25V
Maximum Drain Source Resistance (MOhm)26@10V
Description
Trans MOSFET N-CH Si 55V 20A Rail
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