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HUF75329D3ST
HUF75329D3ST
MOSFETs HUF75329D3ST
onsemi
HUF75329D3ST
--
Diodes, Transistors and Thyristors
MOSFETs
HUF75329D3ST.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyUltraFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)33
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)128000
Typical Gate Charge @ 10V (nC)32
Typical Gate Charge @ Vgs (nC)32@10V|50@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)10
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)1060@25V
Maximum Drain Source Resistance (mOhm)26@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
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