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HUF75345P3
HUF75345P3
MOSFETs HUF75345P3
onsemi
HUF75345P3
--
Diodes, Transistors and Thyristors
MOSFETs
HUF75345P3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyUltraFET
Standard Package NameTO-220
Typical Fall Time (ns)26
Typical Rise Time (ns)118
Number of Elements per Chip1
Maximum Power Dissipation (mW)325000
Typical Gate Charge @ 10V (nC)125
Typical Gate Charge @ Vgs (nC)220@20V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1450
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)42
Maximum Diode Forward Voltage (V)1.25
Typical Gate to Drain Charge (nC)58
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)14
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)4000@25V
Maximum Drain Source Resistance (mOhm)7@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Typical Reverse Transfer Capacitance @ Vds (pF)450@25V
Description
Trans MOSFET N-CH Si 55V 75A 3-Pin(3+Tab) TO-220 Tube
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