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HUF75545S3ST
HUF75545S3ST
MOSFETs HUF75545S3ST
onsemi
HUF75545S3ST
--
Diodes, Transistors and Thyristors
MOSFETs
HUF75545S3ST.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyUltraFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)90
Typical Rise Time (ns)125
Number of Elements per Chip1
Maximum Power Dissipation (mW)270000
Typical Gate Charge @ 10V (nC)105
Typical Gate Charge @ Vgs (nC)195@20V|105@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)40
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)3750@25V
Maximum Drain Source Resistance (mOhm)10@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 80V 75A 3-Pin(2+Tab) D2PAK T/R
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