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HUF75639S3
HUF75639S3
MOSFETs HUF75639S3
onsemi
HUF75639S3
--
Diodes, Transistors and Thyristors
MOSFETs
HUF75639S3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height9.2
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageI2PAK
Process TechnologyUltraFET
Standard Package NameTO-262
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)25
Typical Rise Time (ns)60
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Typical Gate Charge @ Vgs (nC)110@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)56
Typical Input Capacitance @ Vds (pF)2000@25V
Maximum Drain Source Resistance (mOhm)25@10V
Description
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) I2PAK Tube
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