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MOSFETs HUF76139P3-NS2552
onsemi
HUF76139P3-NS2552
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)55|40
Typical Rise Time (ns)65|150
Number of Elements per Chip1
Maximum Power Dissipation (mW)165000
Typical Gate Charge @ 10V (nC)65
Typical Gate Charge @ Vgs (nC)65@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16|20
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)90|30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)2700@25V
Maximum Drain Source Resistance (MOhm)7.5@10V
Description
Trans MOSFET N-CH Si 30V 75A
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