Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
ECCN (US) | EAR99 |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Typical Fall Time (ns) | 55|40 |
Typical Rise Time (ns) | 65|150 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 165000 |
Typical Gate Charge @ 10V (nC) | 65 |
Typical Gate Charge @ Vgs (nC) | 65@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 16|20 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 90|30 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 75 |
Typical Input Capacitance @ Vds (pF) | 2700@25V |
Maximum Drain Source Resistance (MOhm) | 7.5@10V |
Description |