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MOSFETs IAUS200N08S5N023ATMA1
Infineon
IAUS200N08S5N023ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusActive
Channel TypeN
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)200000
Maximum Drain Source Voltage (V)80
Maximum Gate Threshold Voltage (V)3.8
Description
OptiMOS Power-Transistor
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