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MOSFETs IMBF170R650M1XTMA1
Infineon
IMBF170R650M1XTMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Material | SiC |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 7 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Hex Source |
| Package Width | 9.25 |
| Package Height | 4.4 |
| Package Length | 10 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 11 |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 16 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 88000 |
| Typical Gate Charge @ Vgs (nC) | 8@12V |
| Maximum Gate Source Voltage (V) | 15 |
| Typical Turn-On Delay Time (ns) | 22 |
| Maximum Drain Source Voltage (V) | 1700 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Maximum Gate Threshold Voltage (V) | 5.7 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.4 |
| Typical Input Capacitance @ Vds (pF) | 422@1000V |
| Maximum Drain Source Resistance (MOhm) | 580@15V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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