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MOSFETs IMBG120R350M1HXTMA1
Infineon
IMBG120R350M1HXTMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 7 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quint Source |
| Package Width | 9.25 |
| Package Height | 4.4 |
| Package Length | 10 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 0.7 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 65000 |
| Typical Gate Charge @ Vgs (nC) | 5.9@18V |
| Maximum Gate Source Voltage (V) | 18 |
| Typical Turn-On Delay Time (ns) | 6.3 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.7 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 196@800V |
| Maximum Drain Source Resistance (mOhm) | 468@18V |
| Description |
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