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IMW120R030M1HXKSA1
IMW120R030M1HXKSA1
MOSFETs IMW120R030M1HXKSA1
Infineon
IMW120R030M1HXKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSiC
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)200
Process TechnologyTMOS
Typical Fall Time (ns)13
Typical Rise Time (ns)19
Number of Elements per Chip1
Maximum Power Dissipation (mW)227000
Typical Gate Charge @ Vgs (nC)63@18V
Maximum Gate Source Voltage (V)23
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)17
Typical Gate to Drain Charge (nC)15
Maximum Gate Threshold Voltage (V)5.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)56
Typical Input Capacitance @ Vds (pF)2120@800V
Maximum Drain Source Resistance (MOhm)42@18V
Maximum Gate Source Leakage Current (nA)120
Description
Trans MOSFET N-CH SiC 1.2KV 56A Tube
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