Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | SiC |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 200 |
Process Technology | TMOS |
Typical Fall Time (ns) | 13 |
Typical Rise Time (ns) | 19 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 227000 |
Typical Gate Charge @ Vgs (nC) | 63@18V |
Maximum Gate Source Voltage (V) | 23 |
Typical Turn-On Delay Time (ns) | 7 |
Maximum Drain Source Voltage (V) | 1200 |
Typical Turn-Off Delay Time (ns) | 17 |
Typical Gate to Drain Charge (nC) | 15 |
Maximum Gate Threshold Voltage (V) | 5.7 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 56 |
Typical Input Capacitance @ Vds (pF) | 2120@800V |
Maximum Drain Source Resistance (MOhm) | 42@18V |
Maximum Gate Source Leakage Current (nA) | 120 |
Description |