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IMW120R045M1XKSA1
IMW120R045M1XKSA1
MOSFETs IMW120R045M1XKSA1
Infineon
IMW120R045M1XKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Product CategoryPower MOSFET
Supplier PackageTO-247
Process TechnologyTMOS
Typical Fall Time (ns)13
Typical Rise Time (ns)24
Number of Elements per Chip1
Maximum Power Dissipation (mW)228000
Typical Gate Charge @ Vgs (nC)52@15V
Maximum Gate Source Voltage (V)15
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)17
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)52
Typical Input Capacitance @ Vds (pF)1900
Maximum Drain Source Resistance (MOhm)59@15V
Description
Trans MOSFET N-CH SiC 1.2KV 52A 3-Pin(3+Tab) TO-247 Tube
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