Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Material | SiC |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 5 |
Package Height | 21 |
Package Length | 15.8 |
Product Category | Power MOSFET |
Supplier Package | TO-247 |
Maximum IDSS (uA) | 20 |
Process Technology | TMOS |
Standard Package Name | TO-247 |
Typical Fall Time (ns) | 21.5 |
Typical Rise Time (ns) | 0.7 |
Supplier Temperature Grade | Industrial |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 60000 |
Typical Gate Charge @ Vgs (nC) | 5.3@18V |
Maximum Gate Source Voltage (V) | 18 |
Typical Output Capacitance (pF) | 10 |
Typical Turn-On Delay Time (ns) | 7 |
Maximum Drain Source Voltage (V) | 1200 |
Typical Gate Plateau Voltage (V) | 8 |
Typical Turn-Off Delay Time (ns) | 11.4 |
Maximum Diode Forward Voltage (V) | 5.2 |
Typical Diode Forward Voltage (V) | 4.1 |
Typical Gate to Drain Charge (nC) | 1.2 |
Maximum Gate Threshold Voltage (V) | 5.7 |
Minimum Gate Threshold Voltage (V) | 3.5 |
Typical Gate Threshold Voltage (V) | 4.5 |
Typical Gate to Source Charge (nC) | 1.5 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.7 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 182@800V |
Typical Reverse Recovery Charge (nC) | 64 |
Maximum Drain Source Resistance (mOhm) | 468@18V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 18 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 13 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 1@800V |
Description | |