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IMW120R350M1HXKSA1
IMW120R350M1HXKSA1
MOSFETs IMW120R350M1HXKSA1
Infineon
IMW120R350M1HXKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)20
Process TechnologyTMOS
Standard Package NameTO-247
Typical Fall Time (ns)21.5
Typical Rise Time (ns)0.7
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)60000
Typical Gate Charge @ Vgs (nC)5.3@18V
Maximum Gate Source Voltage (V)18
Typical Output Capacitance (pF)10
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)1200
Typical Gate Plateau Voltage (V)8
Typical Turn-Off Delay Time (ns)11.4
Maximum Diode Forward Voltage (V)5.2
Typical Diode Forward Voltage (V)4.1
Typical Gate to Drain Charge (nC)1.2
Maximum Gate Threshold Voltage (V)5.7
Minimum Gate Threshold Voltage (V)3.5
Typical Gate Threshold Voltage (V)4.5
Typical Gate to Source Charge (nC)1.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.7
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)182@800V
Typical Reverse Recovery Charge (nC)64
Maximum Drain Source Resistance (mOhm)468@18V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)18
Maximum Pulsed Drain Current @ TC=25°C (A)13
Typical Reverse Transfer Capacitance @ Vds (pF)1@800V
Description
Trans MOSFET N-CH SiC 1.2KV 4.7A 3-Pin(3+Tab) TO-247 Tube
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