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MOSFETs IMZ120R350M1HXKSA1
Infineon
IMZ120R350M1HXKSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | SiC |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 20 |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 19.3 |
| Typical Rise Time (ns) | 0.7 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 60000 |
| Typical Gate Charge @ Vgs (nC) | 5.3@18V |
| Maximum Gate Source Voltage (V) | 23 |
| Typical Turn-On Delay Time (ns) | 4.8 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 10.8 |
| Maximum Gate Threshold Voltage (V) | 5.7 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.7 |
| Typical Input Capacitance @ Vds (pF) | 182@800V |
| Maximum Drain Source Resistance (MOhm) | 468@18V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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