Product Attribute | Attribute Value |
Tab | Tab |
EU RoHS | Compliant |
Material | SiC |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 4 |
PCB changed | 4 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Source |
Package Width | 5.1(Max) |
Package Height | 21.1(Max) |
Package Length | 15.9(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-247 |
Process Technology | TMOS |
Typical Fall Time (ns) | 20 |
Typical Rise Time (ns) | 18 |
Supplier Temperature Grade | Industrial |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 455000 |
Typical Gate Charge @ Vgs (nC) | 110@18V |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 48 |
Maximum Drain Source Voltage (V) | 1200 |
Typical Turn-Off Delay Time (ns) | 58 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 127 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 4580@25V |
Maximum Drain Source Resistance (MOhm) | 18.4@18V |
Description |