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MOSFETs IPA126N10NM3SXKSA1
Infineon
IPA126N10NM3SXKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusActive
Channel TypeN
Maximum Power Dissipation (mW)33000
Maximum Drain Source Voltage (V)100
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)175
Maximum Pulsed Drain Current @ TC=25°C (A)156
Description
Power Transistor MOSFET
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