Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Process Technology | CoolMOS P7 |
Typical Fall Time (ns) | 18 |
Typical Rise Time (ns) | 8 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 26500 |
Typical Gate Charge @ 10V (nC) | 16.4 |
Typical Gate Charge @ Vgs (nC) | 16.4@10V |
Maximum Gate Source Voltage (V) | 16 |
Typical Turn-On Delay Time (ns) | 19 |
Maximum Drain Source Voltage (V) | 700 |
Typical Turn-Off Delay Time (ns) | 100 |
Maximum Gate Threshold Voltage (V) | 3.5 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 12.5 |
Typical Input Capacitance @ Vds (pF) | 517@400V |
Maximum Drain Source Resistance (mOhm) | 360@10V |
Maximum Gate Source Leakage Current (nA) | 1000 |
Description |