Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Process Technology | CoolMOS |
Typical Fall Time (ns) | 6 |
Typical Rise Time (ns) | 13 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 32000 |
Typical Gate Charge @ 10V (nC) | 36 |
Typical Gate Charge @ Vgs (nC) | 36@10V |
Maximum Gate Source Voltage (V) | 20 |
Typical Turn-On Delay Time (ns) | 26 |
Maximum Drain Source Voltage (V) | 600 |
Typical Turn-Off Delay Time (ns) | 69 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 25 |
Typical Input Capacitance @ Vds (pF) | 1503@400V |
Maximum Drain Source Resistance (MOhm) | 125@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 66 |
Description |