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MOSFETs IPAN60R360PFD7SXKSA1
Infineon
IPAN60R360PFD7SXKSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.8(Max) |
| Package Height | 16.1(Max) |
| Package Length | 10.6(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220FP |
| Maximum IDSS (uA) | 1 |
| Process Technology | CoolMOS |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 11 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 23000 |
| Typical Gate Charge @ 10V (nC) | 12.7 |
| Typical Gate Charge @ Vgs (nC) | 12.7@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 13.5 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 46 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 10 |
| Typical Input Capacitance @ Vds (pF) | 534@400V |
| Maximum Drain Source Resistance (MOhm) | 360@10V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 24 |
| Description |
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