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IPB023N04N G
IPB023N04N G
MOSFETs IPB023N04N G
Infineon
IPB023N04N G
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Diodes, Transistors and Thyristors
MOSFETs
IPB023N04N G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.45(Max)
Package Height4.57(Max)
Package Length10.31(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyOptiMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7.8
Typical Rise Time (ns)6.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)167000
Typical Gate Charge @ 10V (nC)90
Typical Gate Charge @ Vgs (nC)90@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)27
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)40
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)90
Typical Input Capacitance @ Vds (pF)7300@20V
Maximum Drain Source Resistance (MOhm)2.3@10V
Description
Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) D2PAK
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