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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IPB024N10N5ATMA1
IPB024N10N5ATMA1
MOSFETs IPB024N10N5ATMA1
Infineon
IPB024N10N5ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IPB024N10N5ATMA1.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveUnknown
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)13
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)111
Typical Gate Charge @ Vgs (nC)111@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)42
Maximum Gate Threshold Voltage (V)3.8
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)7870@50V
Maximum Drain Source Resistance (MOhm)2.4@10V
Description
Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
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