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IPB073N15N5ATMA1
IPB073N15N5ATMA1
MOSFETs IPB073N15N5ATMA1
Infineon
IPB073N15N5ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyOptiMOS™5
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)214000
Typical Gate Charge @ 10V (nC)19
Typical Gate Charge @ Vgs (nC)49@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)20
Maximum Gate Threshold Voltage (V)4.6
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)114
Typical Input Capacitance @ Vds (pF)3600@75V
Maximum Drain Source Resistance (mOhm)7.3@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R
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