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IPB080N03LGXT
IPB080N03LGXT
MOSFETs IPB080N03LGXT
Infineon
IPB080N03LGXT
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.45(Max)
Package Height4.57(Max)
Package Length10.31(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyOptiMOS
Standard Package NameTO-263
Typical Fall Time (ns)2.8
Typical Rise Time (ns)3.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)47000
Typical Gate Charge @ 10V (nC)18
Typical Gate Charge @ Vgs (nC)18@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.6
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)18
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Typical Input Capacitance @ Vds (pF)1400@15V
Maximum Drain Source Resistance (MOhm)8@10V
Description
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
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