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MOSFETs IPB107N20N3GXT
Infineon
IPB107N20N3GXT
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 2 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.45(Max) |
| Package Height | 4.57(Max) |
| Package Length | 10.31(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Process Technology | OptiMOS |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 26 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 300000 |
| Typical Gate Charge @ 10V (nC) | 65 |
| Typical Gate Charge @ Vgs (nC) | 65@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 41 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 88 |
| Typical Input Capacitance @ Vds (pF) | 5340@100V |
| Maximum Drain Source Resistance (MOhm) | 10.7@10V |
| Description |
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