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IPB180N04S401ATMA1
IPB180N04S401ATMA1
MOSFETs IPB180N04S401ATMA1
Infineon
IPB180N04S401ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyOptiMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)41
Typical Rise Time (ns)24
Number of Elements per Chip1
Maximum Power Dissipation (mW)188000
Typical Gate Charge @ 10V (nC)135
Typical Gate Charge @ Vgs (nC)135@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)38
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)10770@25V
Maximum Drain Source Resistance (mOhm)1.3@10V
Description
Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
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